www.rohm.com ?20 1 4 rohm co., ltd. all rights reserved. 0.9v drive nch mosfet rym002n05 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) high speed switing.2) small package(vmt3). 3) ultra low voltage drive(0.9v drive). ? application switching ? packaging specifications ? inner circuit package taping co de t 2 c l basic ordering unit (pieces) 8000 rym002n05 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 50 v gate-source voltage v gss ? 8v continuous i d ? 200 ma pulsed i dp ? 800 ma continuous i s 125 ma pulsed i sp 800 ma power dissipation p d 150 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 833 ? c / w * each terminal mounted on a recommended land. parameter type source current(body diode) drain current parameter (1) (2) (3) vmt3 * abbreviated symbol : qj (1) gate(2) source (3) drain ? 1 esd protection diode ? 2 body diode *2 *1 *1 1/5 201 4 . 12 - rev. b sot-723 downloaded from: http:///
data sheet www.rohm.com ?20 1 4 rohm co., ltd. all rights reserved. rym002n05 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss 50 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =50v, v gs =0v gate threshold voltage v gs (th) 0.3 - 0.8 v v ds =10v, i d =1ma - 1.6 2.2 i d =200ma, v gs =4.5v - 1.7 2.4 i d =200ma, v gs =2.5v - 2.0 2.8 i d =200ma, v gs =1.5v - 2.2 3.3 i d =100ma, v gs =1.2v - 3.0 9.0 i d =10ma, v gs =0.9v forward transfer admittance l y fs l 0.2 - - s i d =200ma, v ds =10v input capacitance c iss - 26 - pf v ds =10v output capacitance c oss -6-p f v gs =0v reverse transfer capacitance c rss - 3 - pf f=1mhz turn-on delay time t d(on) -5-n s i d =100ma, v dd 25v rise time t r -8-n s v gs =4.5v turn-off delay time t d(off) - 17 - ns r l =250 ? fall time t f - 43 - ns r g =10 ? *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =200ma, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-stateresistance r ds (on) ? * ** * * ** * * * 2/5 2014.12 - rev.b downloaded from: http:///
data sheet www.rohm.com ?20 1 4 rohm co., ltd. all rights reserved. rym002n05 ? electrical characteristics curves (ta = 25 ? c) 100 1000 10000 0.001 0.01 0.1 1 10 v gs = 1.2v pulsed 100 1000 10000 0.001 0.01 0.1 1 10 v gs = 0.9v pulsed 0 0.1 0.2 0 0.2 0.4 0.6 0.8 1 t a =25c pulsed v gs = 2.5v v gs = 1.5v v gs = 1.2v v gs = 0.9v v gs = 0.8v v gs = 0.7v v gs = 4.5v 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1 v ds = 10v pulsed t a = 125c t a = 75c t a = 25c t a = ?? 25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 0.9v v gs = 1.2v v gs = 1.5v v gs = 2.5v v gs = 4.5v t a = 25c pulsed 0 0.1 0.2 024681 0 v gs = 0.7v t a =25c pulsed v gs = 4.5v v gs = 2.5v v gs = 1.5v v gs = 1.2v v gs = 0.8v v gs = 0.9v 100 1000 10000 0.001 0.01 0.1 1 10 v gs = 2.5v pulsed 100 1000 10000 0.001 0.01 0.1 1 v gs = 4.5v pulsed 100 1000 10000 0.001 0.01 0.1 1 10 v gs = 1.5v pulsed fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] gate-source voltage : v gs [v] drain-current : i d [a] static drain-source on-state resistance : r ds ( on )[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on )[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on )[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on )[m ? ] fig.8 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds ( on )[m ? ] drain current : i d [a] drain current : i d [a] t a = 125c t a = 75c t a = 25c t a = ?? 25c t a = 125c t a = 75c t a = 25c t a = ?? 25c fig.9 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds ( on )[m ? ] t a = 125c t a = 75c t a = 25c t a = ?? 25c t a = 125c t a = 75c t a = 25c t a = ?? 25c t a = 125c t a = 75c t a = 25c t a = ?? 25c 3/5 201 4 . 12 - rev. b downloaded from: http:///
data sheet www.rohm.com ?20 1 4 rohm co., ltd. all rights reserved. rym002n05 0.01 0.1 1 0 0.5 1 1.5 v gs =0v pulsed t a = 125c t a = 75c t a = 25c t a = ?? 25c 0.1 1 10 0.01 0.1 1 v ds = 10v pulsed t a = ?? 25c t a =25c t a =75c t a =125c 1 10 100 1000 0.01 0.1 1 t f t d(on) t d(off) t a =25c v dd =25v v gs =4.5v r g =10 ? pulsed t r 0 1 2 3 4 0 0.5 1 1.5 0 1000 2000 3000 4000 5000 02468 t a =25c pulsed i d = 0.20a i d = 0.01a fig.14 typical capacitance vs. drain-source voltage fig.13 switching characteristics drain-current : i d [a] 1 10 100 1000 0.01 0.1 1 10 100 c iss c oss c rss t a =25c f=1mhzv gs =0v fig.15 typical capacitance vs. drain-source voltage drain-source voltage : v ds [v] capacitance : c [pf] total gate charge : qg [nc] gate-source voltage : v gs [v] switching time : t [ns] fig.12 static drain-source on-state resistance vs. gate source voltage static drain-source on-state resistance : r ds ( on )[m ? ] gate-source voltage : v gs [v] fig.11 reverse drain current vs. sourse-drain voltage source current : i s [a] source-drain voltage : v sd [v] fig.10 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain-current : i d [a] t a =25c v dd =25v i d = 0.2a r g =10 ? pulsed 4/5 201 4 . 12 - rev. b downloaded from: http:///
data sheet www.rohm.com ?20 1 4 rohm co., ltd. all rights reserved. rym002n05 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to designesd protection circuit. fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) 5/5 2014.12 - rev.b downloaded from: http:///
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